Abstract
In this paper, the light emission phenomena over solid-state incandescent light emitting devices have been modelled based on Planck’s law of blackbody radiation. The emission spectra from the thermal excitation of nano-resistors with and without inclusion of an Indium Tin Oxide (ITO) or amorphous silicon (a-Si) thin film filter is simulated and compared with those measured from actual devices. The simulated emission spectra are further utilized to study the light characteristics for SSI-LED with ITO, a-Si and polycrystalline silicon (poly-Si) thin film filters.
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