Abstract
Indium Tin Oxide (ITO) thin films have been extensively studied for their excellent photoelectric performance. Nevertheless, the diffusion mechanism of doped-tin in ITO thin film is not sufficiently illuminated to date. Herein, the diffusion behaviors of Sn dopant in ITO films fabricated by RF-sputtering were investigated. As-deposited ITO thin films were treated by supercritical CO2 (SCCO2) fluid with aqua ammonia, then they were annealed at different temperatures. X-ray diffraction patterns (XRD) showed that the crystallization of ITO films occurred upon annealing above 300 °C, which resulted in the higher mobility of electron carriers. Relatively lower electron carrier concentrations were found for the ITO films after SCCO2 treatment and successive annealing at temperatures of 500 and 600 °C. X-ray photoelectron spectroscopy (XPS) analysis revealed that the content of tin element near the surface of ITO thin films can be reduced by SCCO2 fluid treatment. Subsequently, the annealing process results in the diffusion of the tin element to the sub-surface region of the films at different levels depending on the annealing temperature. The present work provides direct evidence for bleaching of tin dopant in the sub-surface region of ITO films by SCCO2 treatments and diffusion of tin from deeper regions to the sub-surface region of the ITO films upon annealing.
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