Comparison of SiGeC/SiGe/SiC–Si heterojunction based vertical nanowire FET using non equilibrium Green's function

Abstract

Advancement in FET technology has forced researchers to seek alternate semiconductor devices and materials. TFETs, junctionless FETs, and nanowires are a few examples of modern FETs, whereas Si alloys, graphene, and TMDC are a few materials that have shown promising behaviour to replace Si in the future. In this work, SiGeC/SiGe/SiC–Si based vertical heterostructure nanowires have been investigated. Due to the nanoscale dimensions of the FET and to incorporate the quantum effects along with Schrodinger-Poisson equations, non-equilibrium Green's function has been used as a principle simulator. For simulation, Ge/Carbon mole concentration of 0.25 and 0.01, respectively is used. To thoroughly investigate the effect of variation in doping profile and temperature range, simulated heterojunction nanowire showed that SiGeC-based nanowire result in a better ION/IOFF ratio as compared to SiGe and SiC-based heterojunction nanowire.