Comparison of FIB-CVD and EB-CVD growth characteristics

Abstract

We evaluated the growth characteristics of amorphous carbon (source gas: C 14H 10) fabricated by focused-ion-beam (FIB) and electron-beam (EB) chemical-vapor-deposition (CVD) in the same apparatus environment. All experiments were carried out in a Ga FIB and SEM composite system. It is confirmed that there are some differences in the surface appearance of pillars fabricated by FIB-CVD and EB-CVD. The rate at which an FIB-CVD pillar grows is about 100 times faster than that of an EB-CVD pillar. We found FIB-CVD wiring has electrical conductor properties with a resistivity of 380 Ω cm, and EB-CVD wiring has electric-insulator properties. Furthermore, we demonstrated by fabricating spring-shape features that FIB-CVD is superior to EB-CVD for making 3D structures.