Miniature Engineered Tapered Fiber Tip Devices by Focused Ion Beam Micromachining

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Optical fibers have been the basis of the modern information technology since Kao and Hockham proposed glass waveguides as a practical medium for communication in 1965. A lot of different optical fiber active/passive devices including couplers, interferometers, gratings, resonators and amplifiers have been widely employed for applications on telecommunications and sensing networks (Agrawal, 2002). For a number of applications, it is important to reduce the device’s size. Small size is often attractive for particular sensing applications because of some benefits such as fast response to detecting small objection with little perturbation on the object being measured. There are two steps to obtain fiber devices as small as possible. First, it is to taper or etch the fiber and reduce its diameter. A subwavelength-scale microfiber is the basic element of miniature fiber devices and subsystems (Tong et al., 2003; Brambilla et al., 2004, 2005, 2010). The second is to engineer the microfiber to realize miniature version of conventional fiber devices. There are various fabrication methods to engineer the microfiber, such as CO2 laser, femtosecond (fs) laser, HF acid etching, arc splicing and focused ion beam (FIB). Most of these techniques have the difficulties in carving the microfiber freely because of the resolution. The latest progress in FIB technique has opened a new widow for ultra-small size fiber devices. So far, FIB is the most flexible and powerful tool for patterning, cross-sectioning or functionalizing a subwavelength circular microfiber due to its small and controllable spot size and high beam current density. FIB systems have been produced commercially for approximately thirty years, primarily for large semiconductor manufacturers. FIB systems operate in a similar fashion to a scanning electron microscope (SEM) except, rather than a beam of electrons and as the name implies, FIB systems use a finely focused beam of ions that can be operated at low beam currents for imaging or high beam currents for site specific sputtering or milling (http://en.wikipedia.org/wiki/Focused_ion_beam). The fine and controllable ion spot size and high beam current density are perfect for microand nano-fabrications with high spatial resolution (~ 10 nm). As a result, FIB has recently become a popular candidate for fabricating high-quality micro-devices or high-precision microstructures. Originally, FIB processing was used for mask repair (Liang et al., 2000), integrated circuit chip repair/modification (Liu et al., 2006), cross-sectional imaging of critical parts of