Abstract
AbstractThe dislocation behavior in C‐face 4H‐SiC homoepitaxial films was studied by using electron‐beam‐induced current (EBIC) technique and is compared with that in Si‐face ones. For the basal plane dislocations (BPDs) with the same line shape appearing in the EBIC images, the mobile partial dislocations (PDs) originated from the dissociation of such BPDs move in two opposite directions, while they move in one direction in the Si‐face samples. The difference of the PD movement between two faces is discussed (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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