Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films

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The electrical activities of stacking faults (SFs) and partial dislocations in 4H-SiC homoepitaxial films were investigated by using the electron-beam-induced current (EBIC) technique. The basal plane dislocation was dissociated into Si ( g) 30 ∘ and C ( g) 30 ∘ partials under electron-beam irradiation, with a SF formed in between. The SF shows bright contrast at RT and dark contrast at 50 K in EBIC images. The reasons were discussed according to the quantum-well state of SF. C ( g) 30 ∘ partial is always more electrically active than Si ( g) 30 ∘ partial at each specific accelerating voltage. The EBIC contrasts of those two partials were discussed with the number of recombination centers.