Abstract
This paper reports the deposition of titanium dioxide thin films on p -type Si(100) substrates using two techniques called conventional magnetron sputtering (CMS) and hollow cathode magnetron sputtering (HCMS). The influence of the plasma parameters on the film characteristics (topography, morphology and crystallinity) was investigated. Films were deposited at different oxygen concentrations (in the Ar + O 2 gas mixture) and axial distances for fixed values of working pressure (5.0 mTorr) and DC power (55 W). They were analyzed by profilometry, AFM and XRD. The gas discharge was diagnosed by single Langmuir probe and OES. Under experimental conditions used in this work, results show that HCMS favors the growing of rutile phase due to the increase of the energy on the film surface caused by the hollow cathode effect. On the other hand, films deposited by CMS present preferentially anatase phase due to the low energy transferred to the growing film. Further studies regarding the influence of plasma properties on the films formation were done in order to understand the plasma-surface correlation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
