Abstract
The aim of this work is to study the influence of electronegative gas (oxygen at different concentrations) on the electrical characteristics of two configurations of magnetron sputtering systems, namely Hollow Cathode Magnetron Sputtering (HCMS) and Conventional Magnetron Sputtering (CMS). A comparison of the plasma impedances and magnetron efficiency of these systems were carried out through the current-voltage characteristics of the discharges operating at the same pressure and different oxygen concentration on O2/Ar mixtures. The results showed significant variations in the plasma impedance and magnetron efficiency, indicating that HCMS system presents better electrical characteristics than CMS system, i.e., low plasma impedance and high magnetron efficiency. The results indicate that HCMS system is a very interesting technique to be used as deposition system in micro and nanoelectronic processes.
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