Abstract
Unintentionally doped and Si-doped multi-channel AlGaN/GaN heterostructures grown on sapphire substrates were investigated. After Si doping in the multi-channel region, the atomic force microscopy measurements showed that the surface root mean square roughness of the multi-channel AlGaN/GaN heterostructure has increased and that many V-shaped defects were formed. Transmission electron microscopy images further indicated the presence of dislocation termination in the multi-channel region of the Si-doped multi-channel AlGaN/GaN heterostructure. Both the formation mechanism of V-shaped defects and the principle of dislocation blocking in the Si-doped multi-channel region are analyzed.
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