Abstract
This work studies the effect of carrier trapping and the recombination activity at the grain boundaries in the p-layer of polysilicon solar cells with respect to the deposition temperature. The dependence of the grain size on the deposition temperature was studied in different samples of boron-doped low-pressure chemical vapor deposition (LPCVD) silicon deposits, conducted in a horizontal low-pressure atmospheric pressure reactor where the temperature varied over a range from 520 °C to about 605 °C. The obtained results show clear evidence of dependence on effective changes in the trapping effect as a function of the trapping density states, the doping level and the thickness dimension of the deposited layer.
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