Observation of gas-phase Si atoms in the chemical vapor deposition of silicon from dichlorosilane

Abstract

Gas-phase silicon atoms have been observed during the chemical vapor deposition (CVD) of silicon from SiH2Cl2 in helium at 625 Torr total pressure. The silicon atoms are products of gas-phase reactions as evidenced by a maximum in the relative density profile. Under identical deposition conditions, SiH2Cl2 CVD yields Si atom densities that are one to two orders of magnitude smaller than those observed during SiH4 CVD.