Abstract
Capacitance–voltage (C–V) characteristics of amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin film transistors (TFTs) are comparatively investigated with two different measurement configurations. Normal gate-to-source/drain (S/D) C–V and quasi-static C–V curves are employed to characterize physical mechanisms with equivalent circuit models for a-IGZO TFTs. The difference between the normal C–V and the quasi-static C–V (QSCV) characteristics is investigated by the dependence on the gate voltage (VG), measurement configuration, and optical illumination. The discrepancy is analyzed to be due to a high hole barrier in the S/D contact region and a slow response of active bulk charges (Qloc and Qfree) in the a-IGZO active layer.
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