Abstract
Three phase Pulse Width Modulation inverter plays vital role in industrial applications. The performance of inverter demeans as several types of faults take place in it. The widely used switching devices in power electronics are Insulated Gate Bipolar Transistors (IGBTs) and Metal Oxide Field Effect Transistors (MOSFET). The IGBTs faults are broadly classified as base or collector open circuit fault, misfiring fault and short circuit fault. To develop consistency and performance of inverter, knowledge of fault mode is extremely important. This paper presents the comparative study of IGBTs fault diagnosis. Experimental set up is implemented for data acquisition under various faulty and healthy conditions. Recent methods are executed using MATLAB-Simulink and compared using key parameters like average accuracy, fault detection time, implementation efforts, threshold dependency, and detection parameter, resistivity against noise and load dependency.
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