Comparative study of 150 keV Ar+ and O+ ion implantation induced structural modification on electrical conductivity in Bakelite polymer

Abstract

A comparative study of 150 keV argon (Ar+) and oxygen (O+) ion implantation induced microstructural modifications in Bakelite Resistive Plate Chamber (RPC) detector material at different implantation fluences have been studied using Positron Annihilation Lifetime Spectroscopy (PALS). Positron lifetime parameters viz., o-Ps lifetime (τ3) and its intensity (I3) upon lower implantation fluences can be interpreted as the cross-linking and the increased local temperature induced diffusion followed by trapping of ions in the interior polymer voids. The increased o-Ps lifetime (τ3) at higher O+ ion implantation fluences indicates chain scission owing to the oxidation and track formation. This is also justified by the X-Ray Diffraction (XRD) and Fourier Transform Infrared (FTIR) results. The modification in the microstructure and electrical conductivity of Bakelite materials are more upon implantation of O+ ions than Ar+ ions of same energy and fluences. The reduced electrical conductivity of Bakelite polymer material upon ion implantation of both the ions is correlated to the conducting pathways and cross-links in the polymer matrix. The appropriate energy and fluence of implanting ions might reduce the leakage current and hence improve the performance of Bakelite RPC detectors.