Comparative study of (1 0 0) and (1 1 1)B InGaAs single quantum well laser diodes

Abstract

In this work, a series of identical In x Ga 1− x As/Al y Ga 1− y As single quantum well laser diodes, grown on (1 0 0) and (1 1 1) B GaAs substrates, have been thoroughly studied. For all samples, clear evidence of reduced threshold current densities in the (1 1 1) B substrate has been observed in electroluminescence spectra at 17 and 300 K . Modelling of the devices, based on a self-consistent solution of Schrödinger–Poisson's equations, was utilised in order to reproduce the experimental results. The model incorporates strain and piezoelectric effects on the quantum well states, free carrier screening, overlap integral computation, and optical gain calculation. The underlying mechanism, that explains the threshold reduction observed in the (1 1 1) B laser diodes, is discussed based on the results of the modelling.