Abstract
Al-free diode lasers emitting at 930 nm having a broadened step-index waveguide structure and a single active InGaAs quantum well have been realized by MOVPE. The impact of waveguide thickness on device performance has been studied. The highest wall plug efficiency of about 60% has been obtained with diode lasers having a 1-/spl mu/m-thick waveguide. Increasing the waveguide thickness to 1.5 /spl mu/m resulted in record low degradation rates below 10/sup -5/ h/sup -1/ for 3-W output power (100 /spl mu/m stripe width). The same diode lasers showed a good long-term reliability even at an output power of 4 W. The best beam quality had diode lasers with a 2-/spl mu/m-thick waveguide, at the expense of a reduced temperature stability.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
