Abstract
We propose a novel material: GaInNAs. It can be formed on a GaAs substrate, and has a bandgap energy suitable for long- wavelength-range laser diodes. The band lineup is ideal for preventing electron overflow. Therefore, applying GaInNAs to long-wavelength-range laser diodes is expected to result in excellent high-temperature performance. We have succeeded in demonstrating continuous-wave operation of GaInNAs/GaAs single quantum well laser diodes at room temperature. The threshold current density was about 1.4 kA/cm<SUP>2</SUP>. The lasing wavelength was about 1.2 micrometers . We have measured some characteristic parameters of the GaInNAs laser diode under pulsed operation. A high characteristic temperature (T<SUB>0</SUB>) of 127 K and a small wavelength shift per ambient temperature change of 0.48 nm/ degree(s)C were obtained. The experimental results indicate the applicability of GaInNAs to long-wavelength-range laser diodes with excellent high- temperature performance.
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