Abstract
High frequency limitations of Si, GaAs and InP IMPATT are investigated by concentrating on the effects of transient carrier transport and generation. A large-signal microscopic computer simulation is used to study the operating mechanisms in the 90, 140 and 220 GHz atmospheric windows. Inertial effects which can enhance or degrade the performance are identified first. The frequency and signal level dependence is then discussed in terms of intrinsic properties of materials.
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Schedule a callMore From: International Journal of Infrared and Millimeter Waves
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