Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs

Abstract

We evaluate and compare the static and dynamic performances of four different 4H-SiC power MOSFETs (Conventional DMOS and UMOS, Superjunction (SJ) DMOS and UMOS FETs) from 0.6 to 10kV. The static on-state performance is determined by analytically calculating the specific on-resistance (RON,sp), while the dynamic switching performance is determined by extracting the specific gate charge (QG,sp) and switching energy loss per cycle (Esw,cycle) using 2D device simulations. It has been found that the SJ UMOS FET exhibits at least a 31% (up to 53% at 0.6kV) reduction in the RON,sp · QG,sp Figure-of-Merit (FoM) compared to the SJ DMOS FET within the breakdown voltage rating range studied.