A comparative performance evaluation of Si IGBT, SiC JFET, and SiC MOSFET power devices for a non-isolated DC-DC boost converter

Abstract

Power semiconductor devices made with wide-bandgap (WBG) materials such as Silicon Carbide (SiC) are improving the energy conversion efficiency, power density, and switching performance of converters. This paper presents a comparative performance evaluation of Si IGBT, SiC JFET, and SiC MOSFET power devices implemented in an otherwise identical, non-isolated dc-dc boost converter. Switching characteristics and energy loss are used to compare the performance of the three different devices. Overall converter performance is evaluated by measuring the total power loss and efficiency at different switching frequencies, load currents, and output power levels. The results show that the SiC MOSFET and SiC JFET perform better in the converter than the Si IGBT because of their lower on-state resistance and switching energy loss. The SiC power devices in the converter reduce total power loss due to their better switching performance at higher frequencies. The SiC converters are more efficient at increasing load currents and output power levels.