Abstract
The influence of interface types in InAs/AlSb based heterostructures are considered for both electrons and holes. First calculations based on the transfer matrix method and including AlAs, InSb interface types or some of their combinations show the existence of more quantized energy hole levels than can be expected in the case when no interface effects are considered. The consideration is simplified by assuming the interfaces as individual intermediate layers formed between the InAs–quantum well and AlSb barriers. While for electrons such an intermediate layer of AlAs modifies the designed barriers or quantum wells of the heterostructure, it creates narrow barriers for holes leading to the appearance of a miniband type of energy levels.
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