Abstract
In this paper, the body diode’s reliability of the commercial 1,2 kV SiC power transistors is investigated. The body-diode voltage drop methodology (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SD</inf> -T methodology) is considered the most reliable temperature sensitive electrical parameter (TSEP) for the junction temperature estimation of SiC MOSFETs during the process of Power Cycling Test (PCT). Literature shows the applied source-drain sensing current would also cause bipolar degradation (BD). The purpose of this article is to demonstrate a PCT-related bipolar degradation phenomenon, the results are comparatively analyzed in commercially available 1,2kV SiC MOSFETs with different structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
