Abstract
In this paper, the body diode’s reliability of the commercial 1,2 kV SiC power transistors is investigated. The body-diode voltage drop methodology (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">SD</inf> -T methodology) is considered the most reliable temperature sensitive electrical parameter (TSEP) for the junction temperature estimation of SiC MOSFETs during the process of Power Cycling Test (PCT). Literature shows the applied source-drain sensing current would also cause bipolar degradation (BD). The purpose of this article is to demonstrate a PCT-related bipolar degradation phenomenon, the results are comparatively analyzed in commercially available 1,2kV SiC MOSFETs with different structures.
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