Comparative Growth Kinetics Of Sige In A Commercial Reduced Pressure Chemical Vapour Deposition Epi Reactor And Anomalies During Growth of Thin Si Layers on Sige

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AbstractA short discussion about growth kinetics of Si and Si1-xGex, epitaxial layers in a reduced pressure CVD reactor using both dichlorosilane and silane is presented. Through careful observations of the growth of very thin Si layers on SiGe, an anomaly in the Si growth ratewas detected such that the thinner the Si layer, the higher the Si growth rate on SiGe. Due to the difficult nature of very thin film characterization, several analysis techniques were used. A possible explanation based on TEM observations is put forward.