One platform for all researcher needs
AI-powered academic writing assistant
Your #1 AI companion for literature search
AI tool for graphics, illustrations, and artwork
Unlock unlimited use of all AI tools with the Editage Plus membership.
Explore Editage Plus
Audio Papers
Ask R Discovery
Translation
Auto-sync
Collaboration
Open Accesshttps://doi.org/10.1016/j.mcm.2009.08.043
Copy DOI
Export
Save
Share
Cite Journal: Mathematical and Computer Modelling |  Publication Date: Sep 30, 2009 |
 Citations: 16 |  License type: publisher-specific-oa |
A precise two-dimensional subthreshold current and capacitance modeling of short-channel, nanoscale double-gate MOSFETs is presented. The model covers a wide range of geometries and material combinations. The subthreshold model is based on conformal mapping techniques. The results are in excellent agreement with numerical simulations.
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
