Abstract
We have developed a compact model of the injection-enhanced insulated-gate bipolar transistor (IGBT) applicable for circuit optimization. The main development is modeling the hole accumulation in the floating-base region. It is demonstrated that the observed negative gate capacitance is well reproduced with the developed model.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
