Abstract
We have improved a compact model of an injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction. The conventional model simulates the negative gate capacitance attributed to the floating-base effect. The relationship between the negative capacitance and the switching waveform is newly solved. The main development is concentrated on the floating-base region, the charge accumulation determined by the floating-base region structure, and the device model parameters. With the use of the model, it is demonstrated that the measured gradual slope switching performance of the studied device can be accurately predicted. It is shown that the gradual slope of Ic depends on the device parameters, which can be utilized for device optimization.
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