Modelling and simulation of integrated circuits

Abstract

Describing integrated circuits based on their physical and topological properties leads naturally to efficient algorithms and device models for circuit simulation. Physically based relaxation algorithms exploit the local and sparse nature of the circuit interconnect. Models that directly represent the processes of charge flow extend naturally to integrated circuit devices allowing the distributed nature of the integrated transistor to be represented. This approach has been used to develop models for metal oxide semiconductors (MOS) and bipolar transistors. The model for the bipolar transistor has been generalized to describe the multicollector merged device structures of integrated injection logic.