Abstract
A low-profile and high-gain Gaussian beam antenna (GBA) operating at 1 THz is demonstrated for the first time. Imprint and dry etching technologies in silicon are employed. A complementary antenna feed based on the magnetoelectric dipole is proposed for enhancing the radiation characteristics of the antenna. The microfabrication technologies are compatible with the Si-based integrated circuit manufacturing process. The terahertz (THz) antenna is realized with over 20 dBi in antenna gain. With high-precision fabrication technologies, a highly efficient THz GBA with smooth morphology and much lower profile than conventional horn and lens antennas is developed. Moreover, the antenna has the characteristic of low sidelobe levels which is advantageous in many wireless applications.
Highlights
T HE terahertz (THz) technology has attracted great interest due to its unique advantages [1]–[3] and great potential in many applications such as security inspection, medical imaging, and mobile communications
High-gain antennas are necessary for THz systems; otherwise, the distance of communications will be very limited [5], [6]
Si microfabrication technologies including deep reactive ion etching (DRIE) and imprinting were employed instead, which can provide precise dimensional control and smooth surface morphology. These technologies are compatible with Si-based integrated circuits (ICs) manufacturing technology, and the high-performance THz antenna can be integrated on the same chip with other components to form a THz device or system
Summary
T HE terahertz (THz) technology has attracted great interest due to its unique advantages [1]–[3] and great potential in many applications such as security inspection, medical imaging, and mobile communications. Si microfabrication technologies including deep reactive ion etching (DRIE) and imprinting were employed instead, which can provide precise dimensional control and smooth surface morphology These technologies are compatible with Si-based integrated circuits (ICs) manufacturing technology, and the high-performance THz antenna can be integrated on the same chip with other components to form a THz device or system. Focus ion beam (FIB), electron beam lithography (EBL), thermal scanning probe lithography (t-SPL), and imprint lithography can all be applied to fabricate 3-D micro and nanostructures [19]–[23] Among these techniques, imprint lithography is more suitable for producing 3-D spherical concave cavity structures over a large area with fast speed, accurate dimensional control, high throughput, and low cost. Imprint technology is applied to fabricate the 3-D spherical concave cavity, which is integrated with a Si-based antenna feed to realize the THz GBA. The antenna has small thickness of about 2.5 wavelengths in free space, enabling its suitability for on-chip integration with other electronic components to form a wireless system or device for future 6G and beyond communications
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