Abstract
To support future 6G communication at high data rate of terabit-per-second (Tb/s), high gain and low-profile terahertz (THz) antennas operating above 1 THz are required. The current horn, lens and microfabricated cavity-backed THz antennas are either bulky or low gain. Antenna with a Fabry-Perot cavity is a promising candidate for to achieve high gain and low-profile in THz. However, conventional technologies such as metal milling, printed circuit board fabrication, or 3D printing have limitations of low precision, large size and rough surface. They are not able to fabricate high performance spherical Fabry-Perot cavity structures at micrometer scale. To overcome these limitations, imprint technology in silicon (Si) was developed to fabricate THz antenna with a Fabry-Perot cavity. The initial results show that high gain and low-profile THz antenna at 1 THz was achieved by using imprint technology in Si. To the best of our knowledge, this is the first time a THz antenna with a Fabry-Perot cavity was successfully developed to work up to 1 THz.
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