Abstract
Flash-lamp annealing (FLA) has been investigated for crystallization of patterned amorphous silicon (a-Si) in the fabrication of NMOS and PMOS Thin-Film Transistors (TFTs) on display glass. Samples were exposed with a xenon flash irradiance of ∼30 kW/cm2 and pulse duration of 200 μs, with bolometer measurements showing an integrated energy of ∼6 J/cm2. Non-self-aligned TFTs fabricated from the resulting polycrystalline silicon demonstrated electron and hole channel mobility values in excess of 300 cm2/(Vs) and 100 cm2/(Vs), respectively. According to the authors’ knowledge, this is the first report of CMOS TFTs demonstrated using the FLA technique.
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