Abstract

Electron storage ring technology is now some twenty-odd years old and is both well-advanced and accepted. As a natural consequence, the commercial manufacture of such machines is becoming a reality. This paper describes the design of what is to be the first industrially manufactured electron storage ring in the United States. As such, the design represents an outstanding example of technology transfer from US national laboratories into the private sector. The design described in this paper, for the Center for Advanced Microstructures and Devices (CAMD) facility at Louisiana State University (LSU) [B.C. Craft et al., Nucl. Instr. and Meth. B40/41 (1989) 379; R.L. Stockbauer et al., these Proceedings, p. 505], features “low energy” injection, at 200 MeV, which is only a fraction of the 1.4-GeV peak energy. Nominal operation will be at 1.2 GeV with a beam current of 400 mA and an emittance of 2 × 10 −7π m rad. The corresponding value of critical wavelength is λ c = 9.5 A ̊ .

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