Abstract
AbstractIt is pointed out that the determination of the midgap density of states in amorphous semiconductors using the space‐charge‐limited‐current method is reliable only when the density of states is less than 1017 cm−3 eV−1 and the electrode spacing is in the order of μm. Beyond these restrictions the current will be affected by the Poole‐Frenkel effect which will distort the determination of density of states from current–voltage characteristics.
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