Abstract
Xerographic spectroscopy of deep trapping states in amorphous semiconductors with constant voltage charging has been studied by a numerical simulation technique. It has been found that full trap occupation cannot be achieved under charging conditions which are in practice characteristic of most charging devices. The occupation of traps at any stage of the charging-up process has been found to be dependent on parameters governing the trap distribution under investigation. Subsequent analysis of experimental data by conventional methods leads to the mapping of a filled trap distribution which has no direct correlation with the true trap state distribution. An iterative procedure is proposed to restore the ability to probe arbitrary trap distribution under such charging conditions, thereby mapping the true density of deep trap states. The procedure has been applied to experimental results obtained for a-As2Se3, the mapped true density of trap states is consistent with established results, thus indicating the validity of the iterative procedure.
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