Comment on “A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias”

Abstract

In the title paper, Jan et al. applied the Kane–Mindlin theory to solve the strain field of a unit through silicon via (TSV) model in response to thermal loading ${\Delta }T$ . We comment on this paper by clarifying why the thermal strain ${\alpha \Delta }T$ cannot affect the mobility of electrons. We also demonstrate that a $ {2 \times 2}$ TSV array would suffice to predict the maximum stress.