Abstract
Thin ceria (CeO 2) films were deposited onto a-plane sapphire substrates via combustion chemical vapor deposition using toluene as a solvent and Ce(III) 2-ethylhexanoate (Ce-2EH) and tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)(IV) cerium (Ce-(TMHD) 4) as chemical precursors. Depositions were made at a substrate temperature of 1000°C using several precursor concentrations and aerosol size distributions. Ceria assumes the fluorite (cubic) structure in the polycrystalline films. Films produced with low concentrations (∼0.001 M) of Ce-2EH display a preferred orientation in which the (200) axis is perpendicular to sapphire substrates. Similar low concentration of Ce-(TMHD) 4 yield films with (111) preferred orientation. High precursor concentrations ((0.002 M) and/or large aerosol size distributions yielded films containing ceria clusters that appear to have nucleated in the gas phase and adhered to the substrates in addition to material that nucleated on the substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
