Abstract
In order to improve the switching properties of GTO thyristors, MeV proton irradiation has been employed to tailor the n-base lifetime. It is shown that a combination of proton and electron irradiation gives the best trade-off between on-state and turn-off losses. As much as a 20% decrease in turn-off energy can be achieved and the effect of different dose combinations on a number of thyristor parameters is explored. It is also shown that a low lifetime region accomplished through proton irradiation is important during the first part of the tail-time by reducing the maximum tail current, I tlp.
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