Abstract
The effects of 3MeV and 10MeV proton irradiation on the performance of InP/InGaAs heterojunction structure are reported. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics before and after proton irradiation are compared. The interface states density is calculated on the basis of the frequency dependent capacitance-voltage (C-V) measurements. The results show that the interface states increase with the increase in fluence after 3MeV proton irradiation. Also, more interface states are induced by the irradiation with lower energy proton.
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