Abstract
In this work, we present a numerical model to solve the drift diffusion equations coupled with electromagnetic model, where all simulations codes are implemented using MATLAB code software. As first, we present a one-dimensional (1-D) PIN diode structure simulation achieved by solving the drift diffusion model (DDM). Backward Euler algorithm is used for the discretization of the proposed model. The aim is to accomplish time-domain integration. Also, finite different method (FDM) is considered to achieve space-Domain mesh. We introduced an iterative scheme to solve the obtained matrix systems, which combines the Gummel’s iteration with an efficient direct numerical UMFPACK method. The obtained solutions of the proposed algorithm provide the time and space distribution of the unknown functions like electrostatic potential and carrier’s concentration for the PIN diode. As second case, the finite-difference time-domain (FDTD) technique is adopted to analyze the entire 3-D structure of the stripline circuit including the lumped element PIN diode. The microwave circuit is located in an unbounded medium, requiring absorbing boundaries to avoid nonphysical reflections. Active device results were presented and show a good agreement with other reference. Electromagnetic results are qualitatively in agreement with other results obtained using SILVACO-TCAD.
Highlights
Propagation and radiative effects become more and more important for the integrated circuit domain, today submicron semiconductor are operated under high frequencies
We present a one-dimensional (1-D) PIN diode structure simulation achieved by solving the drift diffusion model (DDM)
It is well known that electromagnetic compatibility (EMC) and signal integrity (SI) are strongly affected by the geometry of interconnects and by the possibly complex nonlinear/dynamic behavior of the electronic devices collocated at their terminations
Summary
Propagation and radiative effects become more and more important for the integrated circuit domain, today submicron semiconductor are operated under high frequencies. This is important for the characterization of interconnected structures loaded at digital and drivers. In first part of this wok, we develop a modeling and a simulation for a PIN diode For this we give a simple discretization scheme for the DDM model using a finite different algorithm to achieve the space-domain integration, whereas Euler backward algorithm is adopted to accomplish time-domain integration. The resulting equations can be written as implicit sparse matrix systems In this approach, the three equations are coupled together through the whole process of computation. The innovation of this condition is that electromagnetic waves of arbitrary incidence, polarization, and frequency are matched at the boundary and subsequently absorbed in the PML layer
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