Abstract
PNP bipolar transistors are an ESD protection solution for high-voltage analog products. Using both measurements and TCAD simulations, this work analyzes the effects of the deep collector P-Well implants on the I-V characteristic of a high-voltage lateral PNP. Design guidelines for a PNP protection device are formulated; specifically, it is recommended to use a deep and narrow collector and minimize vertical non-uniformity in the doping profile.
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