Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing

S Guagliardo,J-L Autran,F Wrobel,V Pouget,A.D Touboul,P Leroux,Y.Q Aguiar,F Saigne

doi:10.1109/radecs47380.2019.9745682

Single Event Latchup Cross Section Calculation from TCAD Simulations - Effects of the Doping Profiles and Anode to Cathode Spacing

S Guagliardo, J-L Autran + Show 6 more

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https://doi.org/10.1109/radecs47380.2019.9745682

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Publication Date: Sep 1, 2019

Affiliation: University of Montpellier, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence, KU Leuven

#Single Event Latchup Cross Section #TCAD Simulations + Show 8 more

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Abstract

In this paper SEL cross sections were calculated from TCAD simulations varying doping profiles, anode-to-cathode spacing and substrate and well taps placement values. We found that doping profiles and substrate and well taps placement variation has a stronger impact on SEL sensitivity then variation of anode to cathode spacing.

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