Abstract
Data are presented on a quantum-well (QW)-based InGaP∕GaAs∕InGaAs (QW) heterojunction bipolar transistor laser modified with external (increased) mirror reflection yielding lower threshold current (IB=23→19mA) and higher collector breakdown voltage (⩾2.5V). Increased breakdown at lower currents is observed on the collector I-V characteristics, at constant base current IB, as a slope change, a corner, and a narrow-line to broadband spectral shift from stimulated (high coherent optical field) to spontaneous (lower incoherent field) operation, a consequence of quenching or reducing photon-assisted tunneling (Franz-Keldysh effect) under the constraint IE+IB+IC=0 as α→1(α≡ΔIC∕ΔIE).
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