Abstract
The luminescence of interwell excitons laterally confined by long range potential fluctuations and with the use of inhomogeneous electric field in n-i-n GaAs/AlGaAs heterostructures double quantum wells has been investigated under variation of excitation power and temperature. Above mobility threshold very narrow interwell exciton line has been observed and its intensity decrease is linearly dependent on temperature growth. The observed phenomena, which were critical to exciton density and temperature, are attributed to the Bose-condensation in laterally confined quasi-two dimensional system of interwell excitons. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Published Version
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