Coherent Exciton–LO-Phonon Interaction in the Optical Response of Semiconductors

Abstract

We present a numerical study of coherent exciton–LO-phonon interaction in two-band semiconductor models. The exciton–LO-phonon coupling is treated in the self-consistent Born approximation. In the extreme low density excitation regime, the linear optical susceptibility is calculated with Lanczos iteration techniques for a 1. quasi-one-dimensional extended Hubbard semiconductor model and 2. the two-band jellium model in the s-symmetry approximation. The exciton–LO-phonon resonance in the continuum absorption of semiconductors strongly depends on the spatial confinement of the center-of-mass motion of the excitons, which is discussed for the one-dimensional Hubbard model.