Abstract
The domain wall pinning field of epitaxial magnetic rare earth garnet film was modified in certain temperature range by annealing in a reducing atmosphere at temperature as low as 600 °C. The result is analyzed on the assumption of existence of two mutually independent wall-pinning sets of material defects. The heat treatment had no influence on the anisotropy of the sample and on the characteristic periods of the defect distributions in any of the sets, while at the certain temperature range (between 100 and 300 K) the pinning strength of the defects in one set was increased. The result supports the assumed model of coercivity and shows that by an appropriate processing of the sample some of the wall-pinning sets can be modified independently on the others. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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