Abstract
The temperature dependence of domain wall coercive field, H CW , of an epitaxial magnetic rare earth garnet film was modified by covering the garnet layer with sputtered SiO 2 . The result supports a recent model of domain wall coercivity. According to this model the typical shape of the H CW (T) curves originate in the temperature dependence of the anisotropy field, modified by several efficiency functions of the wall-defect interaction. The efficiency functions reflect predominance of different sets of sample defects within different temperature regions. Introduction of some extra stress, due to the sputtered SiO 2 , changed the wall-defect interaction in a certain range of temperatures and altered there the shape of the H CW (T) curve. Characteristics of the original system of defects and estimates of those for the modified sample are presented.
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