Abstract
The facing targets sputtering (FTS) system has several advantages for preparing films over a wide range of working gas pressure on plasma-free substrates. Cobaltchromium thin films seem to be one of the most promising media for perpendicular magnetic recording systems. In this study, the capabilities of the system for depositing cobaltchromium films have been investigated. With argon gas pressure at about 10 −4 Torr, films with morphologically dense microstructure and good c-axis orientation were deposited, even when the incident angle ψ x of sputtered particles to the film plane was as high as 50°–60°. This may imply that the shadowing effect by oblique incidence can be compensated by rapid surface diffusion owing to the high kinetic energy of particles arriving at the growing film. It has been confirmed that the FTS system is very useful for preparing cobaltchromium thin film recording media.
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