Abstract
Continuous transistor scaling in integrated circuits brings about a significant increase of electrical resistance in the source/drain area. To alleviate the problem, this paper proposes Co/CoTix to replace conventional contact plug/barrier materials of W/TiN/Ti. Co and CoTix amorphous alloy layers were deposited on SiO2/p-Si. The 3nm-thick amorphous CoTix layer promoted adhesion between Co and SiO2. The resistivity of the 150nm-thick Co film on CoTix showed low film resistivity close to bulk Co value both in as-deposited and annealed conditions. The amorphous structure of the CoTix layer was maintained throughout annealing up to 500°C. Capacitance-voltage measurement of Co/CoTix/SiO2/p-Si samples showed a good diffusion barrier property of the CoTix layer between Co and SiO2 after thermal stress as well as bias thermal stress. The obtained results indicated that Co/CoTix can be good candidate materials for contact plug and diffusion barrier in advanced integrated circuits.
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