Abstract
This paper presents a novel biasing design that makes the complementary metal-oxide-semiconductor radio frequency power amplifier (PA) resilient to process variability and device reliability. The biasing scheme provides resilience through the threshold voltage adjustment, and at the mean time, it does not degrade the PA performance. Analytical equations are derived for studying the resilient biasing on PA process sensitivity. A class-AB PA with a resilient design is compared with a PA without such a design using a Predictive Technology Model 65-nm technology. The Advanced Design System simulation results show that the resilient biasing design helps improve the robustness of the PA in <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</sub> , <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">P</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sat</sub> , and power-added efficiency. Except for postfabrication calibration capability, the adaptive body biasing design reduces the impact of variability and reliability on PA significantly when subjected to threshold voltage shift and electron mobility degradation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
