Abstract
We present a method to fabricate multiple metal nanogap electrodes of tailored width anddistance in parallel, on the cleaved plane of a GaAs/AlGaAs heterostructure.The three-dimensional patterned structures are obtained by a combination ofmolecular-beam-epitaxial regrowth on a crystal facet, using the cleaved-edge-overgrowth(CEO) method, and subsequent wet selective etching and metallization steps. SEM andAFM studies reveal smooth and co-planar electrodes of width and distance of the order of10 nm. Preliminary electrical characterization indicates electrical gap insulation in the100 MΩ rangewith kΩ lead resistance. We propose our methodology to realize multiple electrode geometries thatwould allow investigation of the electrical conductivity of complex nanoscale objects suchas branched organic molecules.
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